| 发明名称 |
Graded GexSe100-x concentration in PCRAM |
| 摘要 |
The present invention provides a design for a PCRAM element which incorporates multiple metal-containing germanium-selenide glass layers of diverse stoichiometries. The present invention also provides a method of fabricating the disclosed PCRAM structure.
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| 申请公布号 |
US6856002(B2) |
申请公布日期 |
2005.02.15 |
| 申请号 |
US20020230327 |
申请日期 |
2002.08.29 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MOORE JOHN T.;GILTON TERRY L.;CAMPBELL KRISTY A. |
| 分类号 |
H01L21/8234;H01L27/24;H01L45/00;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/8234 |
| 代理机构 |
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