发明名称 |
Method and apparatus for manufacturing single crystal |
摘要 |
A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal; controlling the raw material gas by a gas flow control member having a cylindrical shape; passing the raw material gas through a clearance between the seed crystal and an inner wall of the gas flow control member; and flowing a part of the raw material gas to bypass the seed crystal. The method provides the single crystal having good quality.
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申请公布号 |
US2005028725(A1) |
申请公布日期 |
2005.02.10 |
申请号 |
US20040909390 |
申请日期 |
2004.08.03 |
申请人 |
DENSO CORPORATION;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
KATO TOMOHISA;NISHIZAWA SHINICHI;HIROSE FUSAO |
分类号 |
C30B23/00;C30B29/36;(IPC1-7):C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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