发明名称 Method and apparatus for manufacturing single crystal
摘要 A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal; controlling the raw material gas by a gas flow control member having a cylindrical shape; passing the raw material gas through a clearance between the seed crystal and an inner wall of the gas flow control member; and flowing a part of the raw material gas to bypass the seed crystal. The method provides the single crystal having good quality.
申请公布号 US2005028725(A1) 申请公布日期 2005.02.10
申请号 US20040909390 申请日期 2004.08.03
申请人 DENSO CORPORATION;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY 发明人 KATO TOMOHISA;NISHIZAWA SHINICHI;HIROSE FUSAO
分类号 C30B23/00;C30B29/36;(IPC1-7):C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 主分类号 C30B23/00
代理机构 代理人
主权项
地址