METHOD FOR WET-ETCHING SILICON OXIDE LAYER AND FABRICATING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME TO IMPROVE INTEGRATION OF SEMICONDUCTOR DEVICE AND REMARKABLY REDUCE DEFECT RATIO OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for wet-etching a silicon oxide layer is provided to improve integration of a semiconductor device and remarkably reduce a defect ratio of a semiconductor device by preventing a local silicon oxide layer from being not etched in a wet-etch process with respect to a silicon oxide layer even if a pattern is miniaturized and becomes circular. CONSTITUTION: A silicon oxide layer is formed on a semiconductor substrate. An air bubble inhibition layer is formed on the silicon oxide layer. The silicon oxide layer is wet-etched. A predetermined material layer pattern is formed in the silicon oxide layer, having a protrusion part protruding to the upper surface of the silicon oxide layer.