PROCESS FOR PRODUCING SILICON SINGLE CRYSTAL SUBSTRATE, METHOD OF MEASURING RESISTANCE CHARACTERISTICS AND METHOD OF WARRANTING RESISTANCE CHARACTERISTICS

摘要

A process for producing a silicon single crystal substrate of 1000 ohm.cm or higher average resistivity, characterized by comprising growing a silicon single crystal ingot while adding nitrogen according to the FZ method; slicing the grown ingot into silicon single crystal substrates; and effecting heat treatment of the obtained substrates at 900 to 1250°C for 10 to 120 min. There are further provided methods of measuring and warranting the resistance characteristics of silicon single crystal substrates characterized in that after the above heat treatment, the resistivity and/or in-plane resistivity distribution of produced substrates is measured. As a result, with respect to nitrogen-doped silicon single crystal substrates of high resistivity exceeding 1000 ohm.cm, there can be provided a process for producing a silicon single crystal substrate in which no substantial resistivity change occurs even when heat treatment is conducted during the process of semiconductor element production, and provided methods of measuring and warranting the resistance characteristics of silicon single crystal substrates by which accurate warranting of the resistance characteristics of silicon single crystal substrate products can be attained.