| 发明名称 |
METHOD AND DEVICE FOR CHARGED PARTICLE BEAM LITHOGRAPHY AND METHOD OF MANUFACTURING DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for raster scanning charged particle beam exposure by which a substrate can be exposed to a desired pattern. SOLUTION: The method for charged particle beam lithography in which the substrate is exposed to the desired pattern by raster scanning a charged particle beam includes an adjusting step of narrowing the size of the charged particle beam on the substrate in the raster scanning direction as compared with the size of the beam in the direction perpendicular to the raster scanning direction. COPYRIGHT: (C)2005,JPO&NCIPI
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| 申请公布号 |
JP2005032838(A) |
申请公布日期 |
2005.02.03 |
| 申请号 |
JP20030193836 |
申请日期 |
2003.07.08 |
| 申请人 |
CANON INC;HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
MURAKI MASATO;OTA HIROYA |
| 分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
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