发明名称 |
Film forming method and film forming apparatus |
摘要 |
The present invention comprises the steps of performing a reforming process on a surface of a low dielectric constant insulation film formed on a substrate which includes one of a porous low dielectric constant insulation film and a non-porous low dielectric constant insulation film and forming an insulation film as at least one of an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) on the reformed surface of the low dielectric constant insulation film. For example, plasma is radiated as a reforming process mentioned above, the surface roughness of a low dielectric insulation film is increased and, as a result, adhesion between the films and also between the inter-layer insulation film and other neighboring films can be improved with so-called "anchor effect".
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申请公布号 |
US2005026454(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20040927102 |
申请日期 |
2004.08.27 |
申请人 |
KONISHI NOBUO;IWASHITA MITSUAKI;OHNO HIROKI;KAWAMURA SHIGERU;SUGIURA MASAHITO |
发明人 |
KONISHI NOBUO;IWASHITA MITSUAKI;OHNO HIROKI;KAWAMURA SHIGERU;SUGIURA MASAHITO |
分类号 |
H01L21/20;H01L21/768;(IPC1-7):H01L21/476;H01L23/52;H01L21/31;H01L21/469;H01L23/48;H01L29/40 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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