发明名称 Electron beam exposure apparatus and electron beam measurement module
摘要 An electron beam exposure apparatus for exposing wafer by using an electron beam includes: an electron beam generator for generating the electron beam; a wafer stage for holding the wafer to be exposed; a current detector, provided on the wafer stage, for detecting a current of the electron beam; and a storage unit, provided on the wafer stage, for storing information indicating the current detected by the current detector.
申请公布号 US2005023486(A1) 申请公布日期 2005.02.03
申请号 US20030624423 申请日期 2003.07.21
申请人 ADVANTEST CORPORATION;CANON KABUSHIKI KAISHA;HITACHI, LTD. 发明人 TAKAKUWA MASAKI;NAKAYAMA YOSHINORI;NAKAMURA GEN
分类号 G03F7/20;H01J37/04;H01J37/18;H01J37/304;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):A61N5/00 主分类号 G03F7/20
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