| 摘要 |
PURPOSE: Provided are an etchant for removing a polymer in a semiconductor processing, which reduces the cost in production of a semiconductor device and prevents the corrosion of a device. CONSTITUTION: The etchant for removing a polymer generated on a substrate in a semiconductor processing, comprises a liquid mixture containing as inorganic materials, distilled water, sulfuric acid, hydrogen peroxide and hydrofluoric acid. Specifically, the hydrogen peroxide forms a protecting oxidation film on a metal wiring, a via hole or a pad, the protecting oxidation film protects the metal wiring, the via hole or the pad upon removal of the polymer with hydrofluoric acid. In the etchant, the distilled water is contained in an amount of 70.5-80.5%, the sulfuric acid is contained in an amount of 6.5-8.5% and the hydrogen peroxide is contained in an amount of 15-19%, each being based on the total amount of distilled water, sulfuric acid and hydrogen peroxide. The hydrofluoric acid is employed in an amount of 50-150 ppm.
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