| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device miniaturized and made inexpensive but not resonating even if packaged. SOLUTION: In this semiconductor device, an amplifier 101 and a frequency mixer 102 are composed of a heterojunction bipolar transistor (HBT). Also, the amplifier 101, the frequency mixer 102 and a matching circuit 203 are formed on the same main surface of a semi-insulating substrate. In this configuration, the size of the matching circuit 203 for matching the impedance between the amplifier 101 and the frequency mixer 102 can be reduced, compared to the case where the amplifier 101 and the frequency mixer 102 are built up with a high electron mobility transistor (HEMT), thereby enabling miniaturization and low cost. COPYRIGHT: (C)2005,JPO&NCIPI
|
