发明名称 |
THIN-FILM TRANSISTOR DISPLAY PLATE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin-film transistor display plate through a small number of photographic processes and to provide a thin-film transistor display plate whose spacer column density is adjusted to facilitate liquid crystal injection and its manufacturing method. SOLUTION: The method for manufacturing the thin-film transistor display plate includes the stages of: forming a gate line on a substrate; continuously laminating a gate insulating film and a semiconductor layer on the gate line; vapor-depositing a lower conductive film and an upper conductive film on the semiconductor layer; photographically etching the lower conductive film and semiconductor layer; vapor-depositing a protection film; exposing a 1st part and a 2nd part of the upper conductive film by photographically etching the protection film; exposing a 1st part and a 2nd part of the lower conductive film by removing the 1st part and 2nd part of the upper conductive film; forming a pixel electrode which covers the 1st part of the lower conductive film; exposing a portion of the semiconductor layer by removing the 2nd part of the lower conductive film; and forming spacer columns on the exposed part of the semiconductor layer. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005025205(A) |
申请公布日期 |
2005.01.27 |
申请号 |
JP20040196782 |
申请日期 |
2004.07.02 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
PARK MIN-WOOK;LEE SEIEI;YU SE-HWAN;JEON SANG-JIN |
分类号 |
G02F1/13;G02F1/1339;G02F1/1362;G02F1/1368;G09F9/30;H01L21/28;H01L21/3205;H01L23/52;H01L29/423;H01L29/49;H01L29/786;(IPC1-7):G02F1/136;G02F1/133;H01L21/320 |
主分类号 |
G02F1/13 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|