| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of growing a nitride semiconductor capable of obtaining a nitride semiconductor whose transposition is reduced and which is excellent in crystallinity and to provide the nitride semiconductor device using the nitride semiconductor where an obtained crystallinity is excellent and transposition is scarce as a substrate. SOLUTION: A first nitride semiconductor 2 is grown on a different kind substrate 1 comprising a material different from the nitride semiconductor, after irregularities are partially formed on the first nitride semiconductor 2 to expose a surface where the nitride semiconductor can be grown in a lateral direction on a recessed side surface, the second nitride semiconductor 3 is grown on the first nitride semiconductor 2 having the irregularities. In addition, a device which is constructed by laminating and growing at least an n-type nitride semiconductor as a device structure formed on the obtained second nitride semiconductor 3 as a substrate, an active layer and a p-type nitride semiconductor is provided. COPYRIGHT: (C)2005,JPO&NCIPI
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