摘要 |
In a semiconductor memory device having a shared sense amplifier configuration, a control circuit outputting a bit line isolation signal latches a block selection signal in accordance with a change in a trigger signal. With this configuration, when the same block is selected, no change is caused in the bit line isolation signal. Consequently, charge/discharge current is reduced, and power consumption is reduced. Since a specific bit in a refresh counter is not used, unlike the conventional technique, the design changes little even in the case of changing the configuration of an array.
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