Semiconductor TFT, producing method thereof, semiconductor TFT array substrate and liquid crystal display using the same

摘要

A TFT of the present invention includes an insulating substrate, a first conductive film layer which is to be a gate electrode provided on the insulating substrate, a first insulating film layer which is to be a gate insulating film layer provided on the first conductive film layer, a non-doped semiconductor layer formed on the first insulating film layer, and a second conductive film layer which is to be a source electrode formed on a source region of the semiconductor layer and a drain electrode formed on a drain region of the semiconductor, wherein a junction is formed by implanting an n-type impurity in the source region of the semiconductor layer and the drain region of the semiconductor.