发明名称 |
Manufacturing method for crystalline semiconductor material and manufacturing method for semiconductor device |
摘要 |
A manufacturing method for a crystalline semiconductor material including a plurality of semiconductor crystal grains is provided. The manufacturing method includes forming an amorphous or polycrystalline semiconductor layer on a substrate having a flat surface; forming a plurality of projections each having a side wall surface substantially perpendicular to the flat surface of the substrate, a height set in the range of about 1 nm to less than or equal to about ¼ of the thickness of the semiconductor layer, and a lateral dimension set in the range of about 3 mum to about 18 mum in a direction parallel to the flat surface of the substrate; and heating the semiconductor layer a number of times by using a pulsed laser thereby forming the crystalline semiconductor material including the crystal grains each having a specific plane orientation with respect to a direction perpendicular to the flat surface of the substrate so that the crystal grains respectively correspond to the projections. Accordingly, the position, size, and plane orientation of a crystal can be controlled by a simple step, and a crystalline semiconductor material excellent in planarity as a film can be formed.
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申请公布号 |
US2005006646(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
US20040856138 |
申请日期 |
2004.05.28 |
申请人 |
NAKANO KAZUSHI;HITSUDA YUKIHISA;FUJINO TOSHIO;SHIOMI MICHINORI;SATO JUNICHI |
发明人 |
NAKANO KAZUSHI;HITSUDA YUKIHISA;FUJINO TOSHIO;SHIOMI MICHINORI;SATO JUNICHI |
分类号 |
C30B13/00;C30B29/06;H01L21/20;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/04;H01L29/786;H01S3/00;(IPC1-7):H01L29/04 |
主分类号 |
C30B13/00 |
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