发明名称 ETCHING METHOD FOR MICROMACHINING CRYSTALLINE MATERIAL AND DEVICE MANUFACTURED BY THE METHOD
摘要 PROBLEM TO BE SOLVED: To provide an etching method for micromachining a crystalline material and to provide a device manufactured by using the method. SOLUTION: The invention relates to a method for combining directional ion etching and anisotropic wet etching and to a device and a structure fabricated thereby. The invention is particularly applicable to silicon micromachining and provides architectures that combines crystallographic surfaces and vertical dry-etched surfaces together in the same structure. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005010766(A) 申请公布日期 2005.01.13
申请号 JP20040151958 申请日期 2004.05.21
申请人 ROHM & HAAS ELECTRONIC MATERIALS LLC 发明人 STEINBERG DAN A
分类号 G02B6/42;B81B1/00;B81C1/00;H01L31/00;(IPC1-7):G02B6/42 主分类号 G02B6/42
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