| 摘要 |
PROBLEM TO BE SOLVED: To provide an infrared solid image pickup element with high sensitivity and low noise. SOLUTION: The infrared solid image pickup element is formed on a semiconductor substrate. It comprises an infrared absorbing part 1 for absorbing and converting incident infrared light to heat, an infrared detector 2 for converting the temperature variation due to heat generated in the infrared absorbing part 1 to electric signal, and at least one support wiring 312 which supports the infrared detector 2 apart from the semiconductor substrate 300 and serves as I/O wiring of the infrared detector 2. The infrared detector 2 has a first and a second vertical pn junction diodes 306 and 308 arranged face to face in the direction approximately perpendicular to the semiconductor substrate 300 putting an element separation region in between, and an embedded electrode layer 317 consisting of metal silicide formed along the bottom of the element separation region and conducting each end of the first and the second vertical pn junction diodes 306 and 308. COPYRIGHT: (C)2005,JPO&NCIPI
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