| 摘要 |
PURPOSE: A photoresist composition is provided to form a micropattern up to 50 nm and thus to be useful for a photolithographic process employing an EUV light source. CONSTITUTION: The photoresist composition comprises as base resins, a photoresist polymer containing a repeating unit of the formula 1 and a photoresist polymer containing a repeating unit of the formula 2, a photoacid generator and an organic solvent. In the formulas 1 and 2, each of R1, R2, R3, R8, R9 and R10 is hydrogen or methyl, each of R4, R5, R6, R7 and R11 is a substituted linear or branched C1-C10 alkyl, R12 is a substituted linear or branched C1-C10 alkylene, a : b : c is 10-50 mol%: 0-30 mol%: 50-80 mol%, and d : e : f is 10-70 mol%: 10-50 mol%: 10-50 mol%. Such photoresist composition is employed to form a photoresist pattern for a semiconductor device by applying the photoresist composition onto a top portion of a layer to be etched to form a photoresist film, exposing the photoresist film with a light source, and developing the exposed film.
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