METHOD FOR FABRICATING CELL OF SEMICONDUCTOR MEMORY DEVICE TO PREVENT CHANNELING EFFECT AND INCREASE REFRESH OF DRAM DEVICE

摘要

PURPOSE: A method for fabricating a cell of a semiconductor memory device is provided to prevent a channeling effect by precisely controlling an ion implantation angle and the profile of ions implanted by a buffer layer, and to increase refresh of a DRAM(dynamic random access memory) device by reducing an electric field. CONSTITUTION: An isolation layer(102) is formed on a semiconductor substrate(100) to define an active region. A plurality of gate patterns are formed on the active region of the semiconductor substrate. An insulation layer for a spacer(106a) is formed on the resultant structure. An interlayer dielectric(108) is deposited on the resultant structure. A cell contact region is defined in the active region of the semiconductor substrate. The insulation layer for the spacer and the interlayer dielectric are etched to form a contact hole exposing the semiconductor substrate in the cell contact region. Impurities are implanted to the exposed semiconductor substrate at a predetermined angle by a tilted ion implantation process.