| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device with a trench type isolation layer is provided to prevent bridge between gate electrodes by removing residual layer in moat using a low-setting etch target of a gate electrode. CONSTITUTION: A gate insulating layer(22) is formed on a silicon substrate(21). A gate metal film is formed on the gate insulating layer. A trench(26) is formed in the substrate by self-aligned STI(Shallow Trench Isolation) processing. An isolation layer(27) is formed by filling an insulating layer in the trench. After setting an etch target(T2) in accordance with the surface of the substrate, a gate electrode(23a) is formed by etching the gate metal film.
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