发明名称 METHOD FOR FORMING LOWER ELECTRODE OF CAPACITOR TO PREVENT LEANING AND LIFTING OF LOWER ELECTRODE USING LOW-K DIELECTRIC FILM AS SACRIFICIAL LAYER
摘要 PURPOSE: A method for forming a cylindrical lower electrode of a capacitor is provided to prevent leaning and lifting of the lower electrode by using a low-k dielectric film as a capacitor sacrificial layer. CONSTITUTION: A sacrificial layer(49) made of a low-k dielectric film is formed on a substrate(40). A lower electrode region(52) is defined by etching the sacrificial layer using a photoresist pattern(50). A conductive layer is formed on the lower electrode region. A photoresist layer is applied on the conductive layer. Isolated lower electrodes are formed by removing the conductive layer and the photoresist layer to expose the sacrificial layer. The exposed sacrificial layer is removed by O2 plasma.
申请公布号 KR20050000908(A) 申请公布日期 2005.01.06
申请号 KR20030041505 申请日期 2003.06.25
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KWON, IL YOUNG
分类号 H01L27/108;H01L21/02;H01L21/20;H01L21/8242;(IPC1-7):H01L27/108 主分类号 H01L27/108
代理机构 代理人
主权项
地址