发明名称 METHOD FOR FORMING RESIST PATTERN OF SEMICONDUCTOR DEVICE TO PREVENT RESIST PATTERN FROM COLLAPSING WHEN SUBSTRATE IS ROTATED IN DRY PROCESS
摘要 PURPOSE: A method for forming a resist pattern of a semiconductor device is provided to prevent a resist pattern from collapsing when a substrate is rotated in a dry process by using an IPA(isopropyl alcohol) solution with low surface tension in a process for cleaning the resist pattern and by performing an ultraviolet exposure process on the cleaned resist pattern. CONSTITUTION: Resist is formed on a substrate. A soft bake process is performed on the resist. An exposure process is performed on the soft-baked resist. A PEB(post exposure bake) treatment is performed on the exposed resist. The PEB-treated resist is developed. The developed resist is cleaned twice. An ultraviolet exposure process is performed to harden the cleaned resist. A dry process is performed on the resist processed by the ultraviolet exposure.
申请公布号 KR20050001187(A) 申请公布日期 2005.01.06
申请号 KR20030042759 申请日期 2003.06.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHO, YOUNG JAE
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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