发明名称 Method for forming metal pattern and electromagnetic interference filter using pattern formed by the method
摘要 Disclosed herein are a method for forming a highly electrically conductive metal pattern and an electromagnetic interference filter (EMI filter) using a metal pattern formed by the method. The method comprises the steps of (i) coating a photocatalytic compound onto a substrate to form a photocatalytic film, (ii) selectively exposing the photocatalytic film to light to form a latent pattern acting as a nucleus for crystal growth, and (iii) plating the latent pattern to grow metal crystals thereon. The EMI filter comprises the metal pattern. According to the method, a highly electrically conductive metal wiring pattern can be rapidly and efficiently formed, when compared to conventional methods. In addition, the EMI filter comprising the metal pattern not only exhibits excellent performance, but also is advantageous in terms of low manufacturing costs and simple manufacture processes. Accordingly, the EMI filter can be broadly applied to flat panel display devices, such as plasma display panels (PDPs).
申请公布号 US2005003242(A1) 申请公布日期 2005.01.06
申请号 US20040844377 申请日期 2004.05.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 NO CHANG HO;KIM JIN YOUNG
分类号 H05K9/00;B32B9/00;C01B21/00;C25D5/02;G09F9/00;G12B17/02;H01J9/20;H01J17/04;H05K3/18;(IPC1-7):C25D5/02 主分类号 H05K9/00
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