WET-CHEMICAL SURFACE TREATMENT METHOD OF SEMICONDUCTOR WAFER TO EQUALLY SATISFY REQUIREMENTS FOR SHAPE OF SEMICONDUCTOR WAFER AND ABSENCE OF METAL

摘要

PURPOSE: A wet-chemical surface treatment method of a semiconductor wafer is provided to equally satisfy the requirements for a shape of a semiconductor wafer and absence of metal and to be used in a previously mechanically-treated semiconductor wafer and a single crystalline silicon wafer with a desired arbitrary diameter. CONSTITUTION: A semiconductor wafer is processed in an acid solution to eliminate materials in a range of 10 micrometer or lower from the surface of the semiconductor wafer. The semiconductor wafer is processed in an alkali solution to remove a sufficient quantity of materials so that a crystal region damaged by previous mechanical treatments is completely eliminated.