| 摘要 |
PROBLEM TO BE SOLVED: To satisfactorily secure a distance between bumps of each electrode and to suppress an increase in parasitic resistance by decreasing a cathode region area in a structure with an anode electrode and a cathode electrode arranged on one main surface of a semiconductor substrate. SOLUTION: A semiconductor device comprises a high concentration first conductive type semiconductor substrate 1, a low concentration first conductive type epitaxial layer 2 formed on one main surface, a high concentration first conductive type cathode region 3 selectively formed on the epitaxial layer, a cathode electrode 9 formed connecting to the cathode region, and an anode electrode 8 formed at predetermined intervals from the cathode electrode. The cathode region is formed from the surface of the epitaxial layer down to the depth reaching the semiconductor substrate. The cathode electrode has an area larger than that of the cathode region and is connected to the cathode region at the end part adjacent to the anode electrode. COPYRIGHT: (C)2005,JPO&NCIPI |
