| 发明名称 |
Devices having improved capacitance and methods of their fabrication |
| 摘要 |
A capacitor formed by a person using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates and a dielectric is formed from the first conductive plate.
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| 申请公布号 |
US6838353(B1) |
申请公布日期 |
2005.01.04 |
| 申请号 |
US19990246918 |
申请日期 |
1999.02.09 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
ROBINSON KARL M. |
| 分类号 |
H01L21/02;H01L21/288;H01L21/316;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
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