发明名称 PARASITIC CAPACITANCE-PREVENTING DUMMY SOLDER BUMP STRUCTURE AND METHOD OF MAKING THE SAME
摘要 A parasitic capacitance-preventing dummy solder bump structure on a substrate has at least one conductive layer formed on the substrate, a dielectric layer employed to cover the conductive layer, an under bump metallurgy layer (UBM layer) formed on the dielectric layer, and a solder bump formed on the UBM layer.
申请公布号 US2004266160(A1) 申请公布日期 2004.12.30
申请号 US20040709940 申请日期 2004.06.08
申请人 JAO JUI-MENG;SHEU SHING-REN;CHEN KUO-MING;LIU HUNG-MIN;WANG KUN-CHIH 发明人 JAO JUI-MENG;SHEU SHING-REN;CHEN KUO-MING;LIU HUNG-MIN;WANG KUN-CHIH
分类号 H01L21/60;H01L23/485;H01L23/522;(IPC1-7):H01L21/44;H01L21/48;H01L21/50 主分类号 H01L21/60
代理机构 代理人
主权项
地址