发明名称 |
PARASITIC CAPACITANCE-PREVENTING DUMMY SOLDER BUMP STRUCTURE AND METHOD OF MAKING THE SAME |
摘要 |
A parasitic capacitance-preventing dummy solder bump structure on a substrate has at least one conductive layer formed on the substrate, a dielectric layer employed to cover the conductive layer, an under bump metallurgy layer (UBM layer) formed on the dielectric layer, and a solder bump formed on the UBM layer. |
申请公布号 |
US2004266160(A1) |
申请公布日期 |
2004.12.30 |
申请号 |
US20040709940 |
申请日期 |
2004.06.08 |
申请人 |
JAO JUI-MENG;SHEU SHING-REN;CHEN KUO-MING;LIU HUNG-MIN;WANG KUN-CHIH |
发明人 |
JAO JUI-MENG;SHEU SHING-REN;CHEN KUO-MING;LIU HUNG-MIN;WANG KUN-CHIH |
分类号 |
H01L21/60;H01L23/485;H01L23/522;(IPC1-7):H01L21/44;H01L21/48;H01L21/50 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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