| 摘要 |
A vertical MOS transistor achieving high reliability, and a method of manufacturing the vertical MOS transistor, are provided. Two types of trenches having different widths and depths are formed on the same substrate without increasing manufacturing process steps. The trenches are used differently, with a shallow trench having a narrow width mainly used as a driving transistor, and a wide, deep trench used as a countermeasure to degradation of long term reliability. Damage between a drain and a source is made to develop at the wide, deep trench, so as not to cause characteristics to degrade over the long term.
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