发明名称 |
Method for measuring thickness of thin film-like material during surface polishing, and surface polishing method and surface polishing apparatus |
摘要 |
A thickness of a wafer during polishing operation is detected to accurately perform the polishing. A thickness measuring method, which measures the thickness of the wafer of wafer 7 in polishing a surface, comprises the steps of irradiating the thin film-like material during the surface polishing from a backside with probe light, measuring a reflectance spectrum with a dispersion type multi-channel spectroscope using a photodiode array which has particularly high sensitivity to light having a wavelength ranging from 1 to 2.4 mum, and calculating the thickness on the basis of a wave form of the reflectance spectrum. The surface polishing is performed while the thickness of the wafer 7 is measured by the above-described thickness measuring method, and the polishing is finished when the thickness of the wafer 7 reaches a target thickness. |
申请公布号 |
US2004263868(A1) |
申请公布日期 |
2004.12.30 |
申请号 |
US20040872524 |
申请日期 |
2004.06.22 |
申请人 |
SUMITOMO MITSUBISHI SILICON CORPORATION |
发明人 |
ISEI YOSHITO;HIRAI TOKUMI |
分类号 |
G01B11/06;B24B37/013;B24B37/04;B24B49/02;B24B49/12;H01L21/304;(IPC1-7):H01L21/00;G01B11/28 |
主分类号 |
G01B11/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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