发明名称 |
NOVEL SACRIFICIAL LAYERS FOR USE IN FABRICATIONS OF MICROELECTROMECHANICAL DEVICES |
摘要 |
A sacrificial layer and a method for applying said sacrificial layer in fabricating microelectromechanical devices are disclosed herein. The sacrificial layer comprises an early transition metal. Specifically, the sacrificial layer comprises an early transition metal element, an early transition metal alloy or an early transition metal silicide. |
申请公布号 |
WO2004087561(A3) |
申请公布日期 |
2004.12.29 |
申请号 |
WO2004US09222 |
申请日期 |
2004.03.24 |
申请人 |
REFLECTIVITY INC;PATEL SATYADEV R;DOAN JONATHAN |
发明人 |
PATEL SATYADEV R;DOAN JONATHAN |
分类号 |
B81B;B81B3/00;H01L21/00 |
主分类号 |
B81B |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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