| 摘要 |
FIELD: production of bulk structures for microelectronics, miscellaneous integrated circuits, data storage means, etc. ^ SUBSTANCE: proposed method for producing bulk structure having areas differing in chemical composition by varying source workpiece properties according to desired pattern in areas under treatment includes following procedures. Substrate is covered with a number of working layers of double- and multiple-atom materials, workpiece thus obtained is placed in chamber accommodating charged-particle source, vacuum is built up in this chamber, and workpiece is irradiated by modulated accelerated beam. Particle energy choice depends on ability of particles to pass though all working layers to form dissipation flasks whose sectional area is smaller than clearance between irradiated sections but not less than energy required for displacement and selective removal of chosen-grade atoms incorporated in material of working layers. Choice of irradiation dose rate depends on ability of selective removal of required portion of chosen-grade atoms to attain desired level of material properties from remaining atoms which are found basing on experimental curve of irradiated material properties as function of radiation dose rate. ^ EFFECT: optimized conditions for producing structure using accelerated beam. ^ 20 cl, 7 dwg |
