发明名称 |
Semiconductor light-emitting device |
摘要 |
A method for manufacturing a semiconductor light-emitting device. The semiconductor light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor layer, and a p-type semiconductor layer successively formed atop the substrate. The method forms an intermediate layer having a predetermined pattern between the substrate and the semiconductor layer, or between the semiconductor layer and the n-type semiconductor layer, or between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer has an uneven top layer due to the intermediate layer having a predetermined pattern and the total internal reflection of the LED can be reduced. The intermediate layer is a conductive material to reduce serial resistance of the LED.
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申请公布号 |
US2004256627(A1) |
申请公布日期 |
2004.12.23 |
申请号 |
US20030463393 |
申请日期 |
2003.06.18 |
申请人 |
UNITED EPITAXY COMPANY, LTD. |
发明人 |
TSAI TZONG-LIANG;CHANG CHIH-SUNG;CHEN TZER-PERNG |
分类号 |
H01L33/22;H01L33/24;H01L33/38;(IPC1-7):H01L21/00;H01L33/00 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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