| 摘要 |
Disclosed are a method and system for separating and preparing a sample for analysis from a wafer without contaminating the wafer with an element such as Ga which would raise a problem in the process. The ion beam process system comprises a first ion beam process apparatus including a first ion source, an optical system for converging and deflecting a first ion beam emitted from the first ion source, means for irradiating the first ion beam on a sample and perform scanning with the first ion beam to fabricate a micro sample from a part of the sample, a probe for separating the micro sample fabricated by the first ion beam from the sample, and a micro-sample stage on which the micro sample is to be placed and held, wherein the first ion beam generated by the first ion source contains at least one of an inert gas, oxygen and nitrogen as an element; and a second ion beam process apparatus having a second ion source for generating a second ion beam containing an element different from the element of the first ion beam. The separated micro sample is fed to the second ion beam process apparatus from the first ion beam process apparatus while being held on the micro-sample stage, and is processed by using the second ion beam.
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