| 摘要 |
Row lines include a layer of semiconductive material, conductive material over the layer of semiconductive material, and a passivation layer over the conductive material. The passivation layer contacts a dielectric layer that underlies the semiconductive layer of an emission device at locations that are laterally adjacent to edges of the layer of semiconductive material. One or more pixel openings are defined through the passivation layer, the conductive material, and the underlying semiconductive grid. At least one emitter tip may be exposed through each of the passivation layer, the conductive material, and the layer of semiconductive material. Such row lines may be included in field emission arrays and field emission devices.
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