发明名称 |
Method for fabricating a patterned layer on a semiconductor substrate |
摘要 |
During the patterning of a semiconductor layer, an N-free SiOx layer is produced under an acid-forming photoresist layer in order to prevent a resist degradation. The Si content of the grown SiOx layer being varied in order to set a desired extinction coefficient k and a desired refractive index n. The SiOx layer formation is effected by a vapor phase deposition, SiH4 and O2 being used as starting gases.
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申请公布号 |
US2004248046(A1) |
申请公布日期 |
2004.12.09 |
申请号 |
US20030424507 |
申请日期 |
2003.04.28 |
申请人 |
VOGT MIRKO;HAUSMANN ALEXANDER |
发明人 |
VOGT MIRKO;HAUSMANN ALEXANDER |
分类号 |
G03F7/09;(IPC1-7):G03F7/36 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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