| 摘要 |
A semiconductor device has a SALICIDE structure with low leakage currents, while maintaining shallow source and drain regions. A method of manufacturing the semiconductor device includes forming source and drain regions in a first semiconductor layer, the source region and the drain region being separated from each other, forming a gate insulating film between the source region and the drain region on the first semiconductor layer; and forming a gate electrode on the gate insulating film. The method also includes forming a metal silicide layer showing a first compound phase on the source region, the drain region and the gate electrode, and forming a second semiconductor layer on the metal silicide layer showing the first compound phase where the second semiconductor layer is adapted to react with the metal silicide layer. The method further includes forming a metal silicide layer showing a second compound phase by causing the second semiconductor layer and the metal silicide layer showing the first compound phase to selectively react with each other.
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