发明名称 ARTICLE COMPRISING SILICON SUBSTRATE AND BOND LAYER
摘要 PROBLEM TO BE SOLVED: To provide a bond coat which does not exert a seriously adverse influence on the mechanical properties of a silicon substrate. SOLUTION: The bond coat is used for a silicon substrate and contains an alloy containing a disilicide/a silicon eutectic of a high-melting-point metal. The disilicide of a high-melting-point metal is selected from the group consisting of dislicides of molybdenum, chromium, hafnium, niobium, tantalum, rhenium, titanium, tungsten, uranium, vanadium, and yttrium and their mixtures. The disilicide/silicon eutectic of a high-melting-point metal has a melting point higher than 1,300°C. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004345948(A) 申请公布日期 2004.12.09
申请号 JP20040152720 申请日期 2004.05.24
申请人 UNITED TECHNOL CORP <UTC> 发明人 EATON HARRY E;SUN ELLEN Y;CHIN STEPHEN
分类号 C04B37/00;C04B41/50;C04B41/87;C23C28/04;C23C30/00;F01D5/28;F02C7/00;(IPC1-7):C04B37/00 主分类号 C04B37/00
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