| 摘要 |
PROBLEM TO BE SOLVED: To grow a silicon epitaxial layer on a principal plane of a silicon single crystal substrate by vapor phase epitaxy at a rapid growth speed while suppressing the occurrence of auto-dope, particles, and cracks. SOLUTION: In a method of manufacturing a silicon epitaxial wafer 1, first of all, a silicon oxide film 15 is formed on a rear face 14 of the silicon single crystal substrate 10. Next, with the rear face 14 of the silicon single crystal substrate 10 covered and part of the periphery 16 of the silicon single crystal substrate 10 exposed over a liquid level, the silicon single crystal substrate 10 is dipped in a hydrofluoric acid, leaving a peripheral oxide film 110 extended from the rear face 14 of the silicon single crystal substrate 10 to the most outer edge X of the periphery 16 only in part of the periphery 16. Then, with the remaining peripheral oxide film 110 abutting against a side face of a spot facing portion 33 of a susceptor 32, the silicon epitaxial layer 13 is grown on the principal plane 12 of the silicon single crystal substrate 10 by vapor growth epitaxy. COPYRIGHT: (C)2005,JPO&NCIPI
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