| 摘要 |
A memory system (20), including a first electrode (E2), a memory storage element (23), and a control element (25). The control element (25) having a breakdown voltage. The breakdown voltage is increased by partially-processing the control element (25). In one aspect, the partial-processing results by processing the control element (25) for a briefer duration than the memory storage element (23). In another aspect, the partial-processing results by forming the control element (25) from a plurality of layers (25a, 25b), some of the plurality of layers (25a, 25b) are unprocessed while other ones of the plurality of layers (25a, 25b) are fully processed. <IMAGE>
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