发明名称 |
Buffered substrate for semiconductor devices |
摘要 |
The invention provides a buffered substrate that includes a substrate, a buffer layer and a silicon layer. The buffer layer is disposed between the substrate and the silicon layer. The buffer layer has a melting point higher than a melting point of the substrate. A polycrystalline silicon layer is formed by crystallizing the silicon layer using a laser beam. <IMAGE> |
申请公布号 |
EP0810638(A3) |
申请公布日期 |
1999.02.03 |
申请号 |
EP19970303455 |
申请日期 |
1997.05.21 |
申请人 |
XEROX CORPORATION |
发明人 |
FORK, DAVID K.;BOYCE, JAMES B.;MEI, PING;READY, STEVE;JOHNSON, RICHARD I.;ANDERSON, GREG B. |
分类号 |
H01L21/02;H01L21/20;H01L21/205;H01L21/336;H01L27/12;H01L29/786;(IPC1-7):H01L21/20;H01L21/316 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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