发明名称 Thermally enhanced semiconductor package and fabrication method thereof
摘要 A thermally enhanced semiconductor package and a fabrication method thereof are provided. A plurality of conductive bumps are formed on bond pads on an active surface of a chip. A heat sink is attached to an inactive surface of the chip and has a surface area larger than that of the chip. An encapsulation body encapsulates the heat sink, chip and conductive bumps, while exposing a bottom or surfaces, not for attaching the chip, of the heat sink and ends of the conductive bumps outside. A plurality of conductive traces are formed on the encapsulation body and electrically connected to the ends of the conductive bumps. A solder mask layer is applied over the conductive traces and formed with a plurality of openings for exposing predetermined portions of the conductive traces. A solder ball is implanted on each exposed portion of the conductive traces.
申请公布号 US2004238945(A1) 申请公布日期 2004.12.02
申请号 US20030635168 申请日期 2003.08.05
申请人 SILICON PRECISION INDUSTRIES CO., LTD. 发明人 HUANG CHIEN-PING;HSIAO CHENG-HSU
分类号 H01L23/31;H01L23/36;H01L23/433;H01L23/538;(IPC1-7):H01L23/10 主分类号 H01L23/31
代理机构 代理人
主权项
地址