| 摘要 |
A chemically-amplified resist composition is disclosed, which comprises a polymer of formula (I) below: wherein R<1 >is H, C1-C4 alkyl, or CF3; Q is C4-C12 cycloalkyl; R<2 >is H, C1-C4 alkyl, or CF3; R<3 >is C4-C12 branched or cyclic alkyl; and x+y+z equals to 1. The chemically-amplified resist compositions of the present invention not only can be applied maturely to general lithographic processes, especially to 193 nm lithographic process, but also have excellent photo-sensitivity, and can form a well-resolved pattern and profile.
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