Mask for manufacturing semiconductor devices, method for fabricating the same, and exposure method for the same

摘要

A mask for manufacturing a semiconductor device in accordance with the present invention is equipped with a first mask having separated patterns and a second mask having dense patterns, wherein the first mask and the second mask are exposed under respectively independent illumination conditions to transfer one set of exposure patterns. The first mask includes only isolated patterns wherein adjacent ones thereof do not overlap one another when design data for the exposure patterns is enlarged at a specified magnification, and the second mask includes only dense patterns wherein adjacent ones thereof overlap one another when the design data for the exposure patterns is enlarged at a specified magnification.