发明名称 |
ELECTRODE FOR SEMICONDUCTOR FABRICATING APPARATUS TO REDUCE RESISTANCE OF SURFACE OF ELECTRODE |
摘要 |
PURPOSE: An electrode for a semiconductor fabricating apparatus is provided to reduce resistance of the surface of an electrode and improve efficiency and density of an RF(radio frequency) plasma by forming an oxide preventing coating layer on a raw material for the electrode. CONSTITUTION: An electrode is used in a semiconductor fabricating apparatus. The surface of the electrode includes an anti-oxide coating layer formed of a multilayer. A subsequent heat treatment is performed after each layer of the multilayered anti-oxide coating layer is formed. The anti-oxide coating layer may be a tungsten coating layer(304).
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申请公布号 |
KR20040098874(A) |
申请公布日期 |
2004.11.26 |
申请号 |
KR20030031179 |
申请日期 |
2003.05.16 |
申请人 |
JUSUNG ENGINEERING CO., LTD. |
发明人 |
HUH, JEONG SU |
分类号 |
H01L21/203;(IPC1-7):H01L21/203 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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