| 摘要 |
PROBLEM TO BE SOLVED: To prevent lack of padding to an isolation wall, peeling of an underlying layer and an isolation wall bottom, punch through by etching of the isolation wall bottom, etc. SOLUTION: In a semiconductor device, the linear isolation wall 10 which is used for separating a semiconductor device region and a peripheral region is formed on a semiconductor substrate wherein the semiconductor device region on which patterned layers are laminated and the peripheral region of the device region are formed. The isolation wall 10 is formed of the same material as the pattern layers and has almost the same crosssectional shape as the pattern layer of the minimum width out of the pattern layers of the semiconductor device region. As a result, lack of padding to the isolation wall 10 and punch through by etching of the isolation wall bottom after padding are prevented, and the semiconductor device wherein the isolation wall 10 has a normal shape can be obtained. COPYRIGHT: (C)2005,JPO&NCIPI
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