QUANTUM DOT LIGHT EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a quantum dot light emitting device which performs laser oscillation in a region with little transmission loss by forming long wavelength by using InAs quantum dot and by preventing a confinement barrier from being loose, and emission efficiency can be improved by restraining a current which does not contribute to luminescence. SOLUTION: Configuration having an active region is formed which is constituted of an InAs quantum dot 6 grown in a GaAs region 3, a GaAsSb strain relaxation layer 7 prepared in contact with the InAs quantum dot 6, and a GaAs region 8 prepared in contact with the GaAsSb strain relaxation layer 7. An InGaAs quantum dot 6 and the GaAsSb strain relaxation layer 7 prepared in contact with the InGaAs quantum dot 6 can be also used. When making composition into GaAs1-ySbyit constitutes so that it may be set to 0.1