发明名称 |
Photomask, method of generating resist pattern, and method of fabricating master information carrier |
摘要 |
A recess for deaeration is formed in the surface of a resist film by using the photolithography technique, a photomask is allowed to come into contact with projections for close contact on both sides or around the recess for deaeration, and evacuation is performed via the recess for deaeration, thereby enhancing close contact between the photomask and the projections for close contact. With the configuration, a resist pattern having an accurate recess while preventing diffraction of light is formed.
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申请公布号 |
US6821869(B2) |
申请公布日期 |
2004.11.23 |
申请号 |
US20020139379 |
申请日期 |
2002.05.07 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YANAGI TERUMI;KOMURA NOBUYUKI;ISHIDA TATSUAKI;MIYATA KEIZO |
分类号 |
G03F7/115;G03F7/20;G11B5/86;(IPC1-7):H01L21/425 |
主分类号 |
G03F7/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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