发明名称 |
LOW DIELECTRIC CONSTANT MATERIAL, LOW DIELECTRIC CONSTANT FILM, AND SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a low dielectric constant material including zeolite which has an extremely low dielectric constant and shows little rise in dielectric constant over time. SOLUTION: The zeolite used has (1) a framework density of 17.0 T/1000Å<SP>3</SP>or less and (2) a Si/M ratio (wherein M represents an atom which is a constituent of the framework of the zeolite and is selected from groups III through XIV in the periodic table excluding Si and C (carbon)) of 5 or more. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2004327957(A) |
申请公布日期 |
2004.11.18 |
申请号 |
JP20040003997 |
申请日期 |
2004.01.09 |
申请人 |
MITSUBISHI CHEMICALS CORP |
发明人 |
SETOYAMA TORU;TAKEWAKI TAKAHIKO;TAKEUCHI SACHIE |
分类号 |
H01L21/768;H01L21/316;H01L23/522;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/768 |
代理机构 |
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地址 |
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