| 摘要 |
A photodiode device includes a silicon carbide photodiode including a second semiconductor layer on a first semiconductor layer and an integral aluminum gallium nitride filter on the second semiconductor layer. A method for fabricating a photodiode device for combustion flame temperature determination includes fabricating an integral filter over a silicon carbide photodiode. Examples of various filter fabrication techniques include growing an aluminum gallium nitride filter, fabricating a silicon oxynitride filter, and alternating thin film layers of silicon oxide and silicon nitride.
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