METHOD FOR FORMING CHANNEL REGION IN SEMICONDUCTOR DEVICE BY CONTROLLING ION IMPLANTATION ENERGY ACCORDING TO IMPLANTATION DEPTH

摘要

PURPOSE: A method for forming a channel region in a semiconductor device is provided to improve Ioff characteristic at weak inversion and be applied to ion implantation process for halo, well, and source/drain region without large variation of the process by controlling ion implantation energy according to implantation depth. CONSTITUTION: An ion implantation process is performed in a semiconductor substrate by multi-level ion implantation energy. The ion implantation energy is controlled according to implantation depth. Herein, the total implantation quantity of ion is not changed. An annealing process is performed after the ion implantation process.