METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE TO IMPROVE ELECTRICAL CHARACTERISTIC OF MIM CAPACITOR

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor memory device is provided to improve an electrical characteristic of an MIM capacitor by forming an HfO2 layer and performing a plasma process for the HfO2 layer under the low temperature to form a dielectric layer of the MIM capacitor. CONSTITUTION: A lower electrode(40a) is formed on an upper surface of a semiconductor substrate(10). An HfO2 dielectric layer(50a) is formed on an upper surface of the lower electrode. A plasma process for the HfO2 dielectric layer is performed under the temperature of 250 to 450 degrees centigrade. An upper electrode(60) is formed on an upper surface of the HfO2 dielectric layer.